How STT-MRAM and Toggle-MRAM Work

MRAM, a form of non-volatile memory, allows data to be stored even when power is lost. There are two main variants: STT-MRAM (spin-transfer-torque MRAM) and Toggle-MRAM.

In STT-MRAM, the direction of the electron spin is reversed by a pulse of current, resulting in the storage of data. In contrast, Toggle-MRAM uses a magnetic domain wall that switches between two stable states to store data.

Comparison of technologies and their advantages and disadvantages

STT-MRAM:

Advantages:

Lower power consumption

Faster write and read access times

Disadvantages:

Potential to failure at high temperatures

Toggle-MRAM:

Advantages:

More robust at high temperatures

Disadvantages:

Slower write and read access compared to STT-MRAM

Higher power consumption

Structure widths of MRAM

MRAM can be manufactured in different structure widths, the most common being 28nm and 22nm. The smaller the structure width, the denser the memory cells can be arranged, resulting in higher storage capacity.

The advantages of the 16Mb MRAM from Netsol and Samsung:

A recently published paper from Netsol and Samsung presents a 16Mb MRAM manufactured at an impressive structure width of 28nm. This MRAM offers a unique combination of high storage density and efficiency. The advantages include:

Lower power consumption compared to conventional RAM types

Faster access times for improved performance

High reliability and robustness even under extreme conditions

NETSOL and SAMSUNG?

But how can Netsol accumulate such MRAM know-how… quite simple. They are a spin-off from Samsung and can therefore rely on both Samsung IP and former Samsung employees.